The research line addresses current and emerging electron devices and technologies, with activities in two main fields:

1. Nano-electronic devices and technologies for high-density data storage and in-memory computing: Solid-state memories have been playing an increasingly important role in the world of electronics, thanks not only to the large variety of applications currently arising from the unprecedented bit storage density of nanoscale technologies but also to the prospects of new memory-enabled computing paradigms on the horizon. In this context, the research activities are mainly focused on the experimental and numerical investigation of the basic physics, the reliability and the performance of nano-electronic devices for high-density data storage and in-memory computing. 3D-NAND Flash, NOR Flash, Phase-Change Memories (PCM), Resistive Random Access Memories (ReRAM), Magnetoresistive Random Access Memories (MRAM) and Ferroelectric Memories are just the most relevant investigated technologies. Among the major aims of the research, it is worth mentioning the understanding of the basic phenomenology, the main dependences and the impact on the technology of the variety of physical phenomena taking place in solid-state nano-electronic devices for high-density data storage, exploring also the possibility to exploit these devices for the emerging in-memory computing scenarios. The work is done in collaboration with some of the most important semiconductor companies in the world, among which it is worth mentioning Micron Technology Inc. and STMicroelectronics, or under the framework of national and international research projects.
2. Organic semiconductor devices: organic semiconductor devices, aiming to develop optotelectronic devices and systems on plastic substrates by means of solution-based, low thermal budget, highly scalable techniques (such as inkjet printing, spray-coating etc.).

Nano-electronic devices and technologies for high-density data storage and in-memory computing

The activities performed in this field are constantly pushing forward the frontiers of knowledge on nano-electronic devices and technologies, contributing to the successful trends of solid-state memories for high-density data storage and promoting the development of new memory-enabled computing paradigms. The results achieved by the research line have shed light upon many aspects related to the reliability, performance and prospects of the most relevant state-of-the-art and emerging solid-state memory devices and technologies. Among them, it is worth mentioning the internationally recognized achievements on the experimental characterization and the theoretical modeling of program noise, charge detrapping and random telegraph noise in Flash memories and of resistive switching, data retention and endurance in ReRAM and PCM. Besides, leading-edge results have also been reported on the possibility to exploit nonvolatile memory arrays either as synaptic arrays in supervised and unsupervised artificial neural networks or as computing elements in new, fast and low-power electronics systems.

Devices based on organic semiconductors

The research has contributed to the analysis of carrier transport and of light-matter interaction phenomena in organic semiconductors. In the field of polymeric transistors, the correlation between carrier mobility, energetic disorder and molecular weight has been addressed. The issue of contact resistances in organic transistors has been modelled and analyzed. From the technological point of view, the encapsulation of organic transistors by means of Atomic Layer Deposited Aluminum Oxide has been demonstrated. In the field of organic photodetectors, a multilayer device architecture to suppress dark currents via injection blocking layers has been devised. Photodetectors sensitive to the Vis-NIR have been demonstrated. The indirect detection of X-rays, aimed at biomed applications, has been explored.
Efforts are now directed toward the realization of pixels and matrices thereof by means of scalable, printing techniques (such as inkjet printing), aimed at developing large area image sensors on plastic substrates. In addition, in the framework of a collaboration with the Dipartimento di Matematica of Politecnico di Milano, the simulation and parameter estimation of organic-based devices is now under development.