Daniele Ielmini received the Laurea (cum laude) and Ph.D. in Nuclear Engineering from Politecnico di Milano in 1995 e 2000, respectively. He held visiting positions at Stanford University (2006) and the University of Illinois at Urbana-Champaign (2010). His research interests include the modeling and characterization of non-volatile memories, such as the phase change memory (PCM), the resistive switching memory (RRAM), and the spin-transfer torque magnetic memory (STT-MRAM). In 2016, he coedited the book ‘Resistive switching – from fundamental redox-processes to device applications’ for Wiley-VCH. He authored/coauthored 9 book chapters, 4 patents, more than 250 papers published in international journals and conferences. He has served in several Technical Subcommittees of international conferences, such as IEEE-IEDM (2008-2009), IEEE-IRPS (2006-2008), IEEE-SISC (2008-2010), INFOS (2011-2017), IEEE-ISCAS (2016-2017) and DATE (2017). He is Associate Editor of IEEE Trans. Nanotechnology and Semiconductor Science and Technology (IOP), and a Senior Member of the IEEE. He was recognized a Highly Cited Researcher by Thomson Reuters in 2015. He received the Intel Outstanding Researcher Award in 2013, the ERC Consolidator Grant in 2014, and the IEEE-EDS Paul Rappaport Award in 2015.