RESNATI DAVIDE
Research collaborator
Davide Resnati was born in 1990 in Milan, Italy.
He received the B.Sc. degree and the M.Sc. degree in Electronic Engineering, both from Politecnico di Milano, in 2012 and 2014 respectively.
His M.Sc. thesis dealt with the investigation, through numerical modeling, of the dynamic operation of T-RAM cells, an innovative
technology for decananometric-scale dynamic-RAM applications.
He is currently pursuing the PhD degree in Information Engineering at Politecnico di Milano.
His main research interests include the experimental analysis and modeling of physical phenomena which constitute major reliability
issues for nanoscale NAND Flash memory Technologies.
He received the B.Sc. degree and the M.Sc. degree in Electronic Engineering, both from Politecnico di Milano, in 2012 and 2014 respectively.
His M.Sc. thesis dealt with the investigation, through numerical modeling, of the dynamic operation of T-RAM cells, an innovative
technology for decananometric-scale dynamic-RAM applications.
He is currently pursuing the PhD degree in Information Engineering at Politecnico di Milano.
His main research interests include the experimental analysis and modeling of physical phenomena which constitute major reliability
issues for nanoscale NAND Flash memory Technologies.
