Massimiliano Galvagno was born in Monza in 1999. He holds a Master's Degree in Engineering Physics at Politecnico di Milano in 2023, with a Thesis entitled “Finite Element Modeling of Spin-Dependent Transport”. Currently, he is attending a Ph.D. in Information Technology at Politecnico di Milano in a joint program with STMicroelectronics. The main focus of the research activity concerns the development of advanced simulation tools for the optimization of the next generation of power semiconductor devices.